CHA2090 rohs compliant ref. : dsCHA20909347-13 dec 99 1/ 8 specifications subject to change without notice united monolithic semiconductors s.a.s. route dpartementale 128 - b.p.46 - 91401 orsay cede x france tel. : +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 33 03 09 17-24ghz low noise amplifier gaas monolithic microwave ic description the CHA2090 is a three-stage self-biased wide band monolithic low noise amplifier. the circuit is manufactured with a standard 0.25m gate length phemt process, via holes through the substrate, air bridges and electron beam gate lithography. it is supplied in chip form. main features broadband performance 17-24ghz 2.0db noise figure 23db gain, 1db gain flatness low dc power consumption, 55ma chip size: 2,17 x 1,27 x 0.1mm 0 5 10 15 20 25 30 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 frequency ( ghz ) 0 2 4 6 8 10 12 on wafer typical measurements main characteristics tamb = +25c, vd=4.5v, pads b,d,e=gnd symbol parameter min typ max unit fop operating frequency range 17 24 ghz nf noise figure 2.0 3.0 db g gain 19 23 db vswrin input vswr 2:1 vswrout output vswr 2:1 esd protection : electrostatic discharge sensitive device. observe handling precautions !
CHA2090 17- 24ghz low noise amplifier ref. : dsCHA20909347-13 dec 99 2/8 specifications s ubject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 main characteristics tamb = +25c, vd=4.5v, pads b, d, e=gnd symbol parameter min typ max unit fop operating frequency range 17 24 ghz nf noise figure (1) 2 3 db g gain (1) 19 23 db pout pout -1db gain compression 10 dbm vswrin input vswr (1) 2.0:1 2.5:1 vswrout output vswr (1) 2.0:1 2.5:1 vdd positive drain voltage (2) 4.5 5.0 v (1) these values are representative of on-wafer mea surements that are made without bonding wires at the rf ports. when the chip is attached with typ ical 0.15nh input and output bonding wires, the indicated parameter values should be improved. (2) see chip biasing option page 7/8. absolute maximum ratings (1) tamb = +25c symbol parameter values unit vd drain bias voltage (3) 5.5 v pin maximum peak input power overdrive (2) +15 dbm top operating temperature range -40 to +85 c tstg storage temperature range -55 to +125 c (1) operation of this device above anyone of these parameters may cause permanent damage. (2) duration < 1s. (3) see chip biasing option page 7/8.
17-24ghz low noise amplifier CHA2090 ref. : dsCHA20909347-13 dec 99 3/8 specifications s ubject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical result chip typical response ( on wafer sij ) : tamb = +25c vd = 4.5v id = 55ma frequency ms11 ps11 ms12 ps12 ms21 ps21 ms22 ps22 mod pha mod pha mod pha mod pha ghz db deg db deg db deg db deg 1.000 -0.53 -20.8 -89.62 -92.0 -41.76 -148.5 -0.72 -23.8 2.000 -0.06 -39.0 -97.43 26.6 -48.17 170.5 -0.30 -5 0.3 3.000 -0.10 -58.5 -87.21 -23.0 -52.46 74.5 -0.33 -7 5.6 4.000 -0.16 -77.4 -84.87 -135.7 -61.22 154.8 -0.49 -101.9 5.000 -0.23 -96.5 -83.35 120.1 -35.86 -69.1 -0.89 - 129.8 6.000 -0.34 -115.2 -66.23 84.2 -12.12 -123.6 -1.77 -159.0 7.000 -0.35 -134.1 -72.40 -58.1 1.34 145.9 -3.35 16 8.8 8.000 -0.45 -154.1 -73.93 -13.6 7.48 75.4 -6.63 141 .1 9.000 -0.52 -175.4 -72.23 -7.1 11.96 18.3 -9.34 119 .1 10.000 -0.75 160.3 -66.01 -34.2 15.54 -28.2 -13.97 85.5 11.000 -1.21 132.1 -60.26 -60.3 18.30 -72.2 -22.57 53.2 12.000 -2.33 97.8 -56.60 -94.9 19.92 -116.5 -39.69 -60.4 13.000 -4.60 57.2 -53.53 -135.9 21.36 -163.1 -30.19 -133.1 14.000 -8.86 8.5 -52.43 -173.4 22.49 149.3 -25.30 -127.8 15.000 -16.48 -40.4 -52.50 157.8 23.60 100.6 -21.56 -134.5 16.000 -24.70 -70.2 -52.26 135.4 23.89 62.2 -19.34 -144.1 17.000 -27.75 -80.6 -52.62 108.9 24.01 28.4 -17.60 -158.0 18.000 -23.51 -87.4 -51.36 100.6 23.66 -1.9 -16.51 -172.3 19.000 -21.41 -95.7 -51.27 60.6 23.52 -30.5 -16.34 163.7 20.000 -18.63 -107.0 -54.07 52.8 23.46 -57.8 -17.75 149.6 21.000 -16.77 -115.6 -55.06 30.3 23.11 -84.4 -19.33 131.6 22.000 -14.95 -123.2 -57.35 23.7 23.14 -111.0 -22.26 113.9 23.000 -13.73 -132.0 -59.54 8.0 22.82 -137.3 -25.44 89.1 24.000 -12.59 -138.8 -60.85 32.3 22.36 -162.8 -29.95 43.8 25.000 -11.60 -144.7 -62.07 49.5 22.01 171.8 -28.26 -24.5 26.000 -10.61 -149.8 -54.29 40.2 21.46 147.9 -22.90 -58.9 27.000 -9.34 -154.5 -55.03 23.9 20.91 125.0 -19.22 -84.3 28.000 -7.89 -160.6 -52.05 -11.6 20.49 102.3 -17.12 -102.6 29.000 -6.63 -171.3 -60.41 -22.1 20.06 78.5 -16.20 -114.2 30.000 -5.86 179.9 -56.56 23.2 19.50 55.4 -14.73 -123.1 31.000 -4.83 172.0 -52.73 -13.7 19.03 31.5 -13.72 -137.5 32.000 -3.95 161.7 -54.11 -40.7 18.31 6.9 -13.60 -147.0 33.000 -3.18 151.2 -54.59 -51.2 17.51 -17.5 -13.61 -155.8 34.000 -2.61 140.2 -55.15 -37.9 16.54 -42.3 -14.22 -161.4 35.000 -2.15 129.3 -51.68 -92.2 15.35 -66.8 -14.94 -161.8 36.000 -1.77 117.9 -57.64 -111.2 13.94 -91.0 -15.31 -154.5 37.000 -1.65 106.7 -60.87 -68.5 12.41 -114.4 -13.87 -143.9 38.000 -1.64 95.9 -53.10 -33.4 10.67 -137.5 -11.60 -140.4 39.000 -1.65 85.9 -47.45 -99.7 8.76 -159.6 -9.18 -143.5 40.000 -1.76 75.2 -46.80 -137.0 6.70 178.9 -7.06 -1 51.0
CHA2090 17- 24ghz low noise amplifier ref. : dsCHA20909347-13 dec 99 4/8 specifications s ubject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on wafer measurements bias conditions: vd = 4.5v, id = 55ma 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 frequency ( ghz ) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 -5 0 5 10 15 20 25 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 frequency ( ghz ) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 gain dbs11 dbs22
17-24ghz low noise amplifier CHA2090 ref. : dsCHA20909347-13 dec 99 5/8 specifications s ubject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 typical on test jig measurements bias conditions: vd = 4.5v, id = 55ma 0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 frequency ( ghz ) 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 -5 0 5 10 15 20 25 5 7 9 11 13 15 17 19 21 23 25 27 29 31 33 35 frequency ( ghz ) -30 -25 -20 -15 -10 -5 0 5 10 15 20 25 30 gain dbs11 dbs22
CHA2090 17- 24ghz low noise amplifier ref. : dsCHA20909347-13 dec 99 6/8 specifications s ubject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip assembly and mechanical data note : supply feed should be capacitively bypassed. 25 m m diameter gold wire is to be preferred. 2100 1295 1200 1270 35 2170 35 bonding pad positions. (chip thickness: 100m. pad size: 100x80m2) (all dimensions are in micrometers)
17-24ghz low noise amplifier CHA2090 ref. : dsCHA20909347-13 dec 99 7/8 specifications s ubject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 chip biasing options this chip is self-biased, and flexibility is provid ed by the access to number of pads. the internal dc electrical schematic is given in order to use these pads in a safe way. the two requirements are: n1: not exceed vds = 3.5volt (internal drain to s ource voltage) n2: not biased in such a way that vgs becomes posi tive. (internal gate to source voltage) we propose two standard biasing: low noise and low consumption: vd = 4.5v and b, d , e grounded all the other pads non connected (nc) idd = 55ma & pout-1db = 10dbm typical (equivalent to a, b, c, d, e, f: non connected and vd=4.5v; g1=g2=g3=+1v low noise and higher output power vd = 4.5v and b, c, f grounded all the other pads non connected (nc) idd = 75ma & pout-1db = 12dbm typical
CHA2090 17- 24ghz low noise amplifier ref. : dsCHA20909347-13 dec 99 8/8 specifications s ubject to change without notice route dpartementale 128 , b.p.46 - 91401 orsay ce dex - france tel.: +33 (0)1 69 33 03 08 - fax : +33 (0)1 69 3 3 03 09 ordering information chip form : CHA2090-99f/00 information furnished is believed to be accurate an d reliable. however united monolithic semiconductors s.a.s. assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by impli cation or otherwise under any patent or patent rights of united monolithic semiconductors s.a.s. . specifications mentioned in this publication are subject to change without notice. this publication supersedes and re places all information previously supplied. united monolithic semiconductors s.a.s. products are not authorised for use as critical components in life support devices or s ystems without express written approval from united monolithic semiconductors s.a.s.
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